?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA15S125P rev. c3 FGA15S125P ? 1250 v, 15 a shorted-anode igbt august 2013 absolute maximum ratings thermal characteristics notes: 1: limited by tjmax symbol description ratings unit v ces collector to emitter voltage 1250 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c30 a collector current @ t c = 100 o c15 a i cm (1) pulsed collector current 45 a i f diode continuous forward current @ t c = 25 o c30 a diode continuous forward current @ t c = 100 o c15 a p d maximum power dissipation @ t c = 25 o c136 w maximum power dissipation @ t c = 100 o c68 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case, max - 1.1 o c / w r ja thermal resistance, junction to ambient, max - 40 o c / w FGA15S125P 1250 v, 15 a shorted-anode igbt features ? high speed switching ? low saturation voltage: v ce(sat) = 2.25 v @ i c = 15 a ? high input impedance ? rohs compliant applications ? induction heating, microwave oven general description using advanced field stop trench and shorted-anode technol- ogy, fairchild?s shorted-anode trench igbts offer superior con- duction and switching performances for switching applications. the device can operate in parall el configuration with excep- tional avalanche capability . this device is designed for induc- tion heating and microwave oven. ge c to-3pn g e c
FGA15S125P ? 1250 v, 15 a shorted-anode igbt ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA15S125P rev. c3 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package re el size tape width quantity FGA15S125P FGA15S125P to-3pn - - 30 symbol parameter test conditions min. typ. max. unit off characteristics i ces collector cut-off current v ce = 1250v, v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 15ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 15a , v ge = 15v t c = 25 o c -2.252.72 v i c = 15a , v ge = 15v t c = 125 o c -2.5- v i c = 15a , v ge = 15v, t c = 175 o c -2.75- v v fm diode forward voltage i f = 15a , t c = 25 o c-22.55v i f = 15a , t c = 175 o c -2.55- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1360 - pf c oes output capacitance - 40 - pf c res reverse transfer capacitance - 20 - pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 15a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c -10- ns t r rise time - 260 - ns t d(off) turn-off delay time - 400 - ns t f fall time - 100 - ns e on turn-on switching loss - 0.74 - mj e off turn-off switching loss - 0.50 - mj e ts total switching loss - 1.24 - mj t d(on) turn-on delay time v cc = 600v, i c = 15a, r g = 10 , v ge = 15v, resistive load,, t c = 175 o c -11-ns t r rise time - 320 - ns t d(off) turn-off delay time - 420 - ns t f fall time - 250 - ns e on turn-on switching loss - 0.94 - mj e off turn-off switching loss - 1.23 - mj e ts total switching loss - 2.17 - mj q g total gate charge v ce = 600v, i c = 15a, v ge = 15v - 129 - nc q ge gate to emitter charge - 9 - nc q gc gate to collector charge - 66 - nc
FGA15S125P ? 1250 v, 15 a shorted-anode igbt ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA15S125P rev. c3 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40 50 60 70 80 v ge =17v 20v 15v 12v 9v 10v 8v t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40 50 60 70 80 v ge =20v 17v 15v 12v 9v 10v 8v t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 01234567891011121314 0 10 20 30 40 50 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage, v ge [v] 0.0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 60 common emitter v g e = 15v t c = 25 o c t c = 175 o c --- collector current, i c [a] collector-emitter voltage, v ce [v] 0 4 8 12 16 20 0 5 10 15 20 30a 15a i c = 7.5a common emitter t c = 25 o c collector emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 30a i c = 7.5a 15a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c]
FGA15S125P ? 1250 v, 15 a shorted-anode igbt ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA15S125P rev. c3 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resistance 4 8 12 16 20 0 4 8 12 16 20 30a 15a i c = 7.5a common emitter t c = 175 o c collector emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 5 1015202530 1 1000 10000 100 10 common emitter v g e = 0v, f = 1mhz t c = 25 o c c ie s c oe s c re s capacitance [pf] collector-emitter voltage, v ce [v] 0 10203040506070 0 3 6 9 12 15 600v 400v v cc = 200v common emitter t c = 25 o c gate emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 10 20 30 40 50 60 70 t r t d(on) 5 200 common emitter v c c = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 175 o c --- switching time [ns] gate resistance, r g [ ] 10 20 30 40 50 60 70 1000 100 t f t d(off) 10000 common emitter v c c = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 175 o c --- switching time [ns] gate resistance, r g [ ]
FGA15S125P ? 1250 v, 15 a shorted-anode igbt ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA15S125P rev. c3 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching figure 18. forward characteristics soa characteristics 15 30 500 1000 7.5 t f t d(off) 100 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c --- switching time [ns] collector current, i c [a] 15 30 10 1000 7.5 t r t d(on) 100 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c --- switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 100 1k 10k e off e on common emitter v c c = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 175 o c --- switching loss [uj] gate resistance, r g [ ] 15 30 100 1k 10k 0 7.5 e on e off common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c --- switching loss [uj] collector current, i c [a] 12 0.1 1 10 forward voltage, v f [v] 80 0.5 t c = 25 o c --- t c = 175 o c forward current, i f [a] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGA15S125P ? 1250 v, 15 a shorted-anode igbt ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA15S125P rev. c3 typical performance characteristics f i g u r e 1 9 . t ra n s i e n t t h e r m a l i m p e d a n c e o f i g b t 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0.1 1 1.2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA15S125P ? 1250 v, 15 a shorted-anode igbt ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA15S125P rev. c3 mechanical dimensions figure 20. to-3p 3l - 3ld, t03, plastic, eiaj sc-65 package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_tt3p0-003 dimensions in millimeters
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